What is the Difference Between IGBT and Thyristor?

The main difference between IGBT (Insulated Gate Bipolar Transistor) and thyristor lies in their operating characteristics and applications. Here are some key differences between the two:

1. Terminals: IGBT has three terminals: emitter, collector, and gate, while thyristor has three terminals: anode, cathode, and gate.
2. Gate voltage: Thyristors require a pulse to change into conducting mode, whereas IGBTs need a continuous supply of gate voltage.
3. Directionality: Unlike thyristors, IGBTs are unidirectional, meaning they can only switch current in the forward direction.
4. High-frequency switching: IGBTs are more suitable for high-frequency switching applications, while thyristors are better suited for high-power, high-voltage applications requiring control of AC power.
5. Power handling: IGBTs can handle large currents with a very low gate current drive, making them suitable for medium to high-end power applications such as traction motors, induction heating, and power supplies. Thyristors are primarily used in megawatt rectification from AC to DC in low to medium power applications.

In summary, IGBTs are generally used for high-frequency switching and applications requiring control of large currents, while thyristors are more suitable for high-power, high-voltage applications with control of AC power.

Comparative Table: IGBT vs Thyristor

IGBTs (Insulated Gate Bipolar Transistors) and thyristors are both semiconductor devices used for current control. They share some similarities, such as having a gate, but they also have key differences in their structure, operation, and applications. Here is a comparison table highlighting the differences between IGBTs and thyristors:

Thyristors have a wider range of applications and are used across various industries, while IGBTs are more specialized and are typically used in high-speed switching applications and high voltage and current handling scenarios.