What is the Difference Between EPROM and EEPROM?

The main difference between EPROM and EEPROM lies in the methods used to erase their contents. Here are the key differences between the two:

1. Erasure Method: EPROM (Erasable Programmable Read-Only Memory) uses UV (ultraviolet) light for erasing its content, while EEPROM (Electrically Erasable Programmable Read-Only Memory) uses electric signals for erasing its content.
2. Erasure Speed: Erasing content in EPROM takes 15 to 20 minutes, whereas erasing content in EEPROM takes only 5 milliseconds.
3. Internal Structure: Both EPROM and EEPROM use MOS transistors in their construction, but EPROM requires a hole to be drilled in order to expose it to UV light for erasing, while EEPROM does not need any such modification.
4. Voltage Consumption: The transistor used in EPROM consumes 12.5 volts, while the transistor used in EEPROM consumes 5 volts.
5. Programming Technique: EPROM uses hot electron injection programming technique, while EEPROM uses tunnel effect as a programming technique.
6. Flexibility: EEPROM is more flexible and faster than EPROM, as it can be electrically erased and rewritten without the need for any special equipment.

In summary, while both EPROM and EEPROM are types of non-volatile memory that can be erased and reprogrammed, the methods and speeds of erasing their contents differ, making EEPROM more flexible and faster than EPROM.

Comparative Table: EPROM vs EEPROM

EPROM and EEPROM are both types of non-volatile memory, meaning they can retain data even when power is lost. However, they have some key differences:

Both EPROM and EEPROM are used to store data and instruction sets that do not change frequently and need to be retained even when power is lost. However, EPROM requires UV rays for erasure, while EEPROM can be erased using electrical signals, making it more convenient and easier to work with.